Full specification
Storage Capacity: 4TB
Interface: PCIe Gen 4.0 x4 / NVMe 2.0
Form Factor: M.2 2280
Memory Type: Samsung V-NAND TLC
Sequential Read: Up to 7,450 MB/s
Sequential Write: Up to 6,900 MB/s
Random Read: Up to 1,600,000 IOPS
Random Write: Up to 1,550,000 IOPS
Endurance: 2,400 TBW
MTBF: 1,500,000 Hours
Idle Power: 55 mW
Read/Write Power: 8.6 Watts
Warranty: 5-Year Limited